Xing′ao LI
,
Zuli LIU
,
Kailun YAO
材料科学技术（英）
Copper nitride thin film was deposited on glass substrates by reactive DC (direct current) magnetron sputtering at a 0.5 Pa N2 partial pressure and different substrate temperatures. The as-prepared film, characterized with X-Ray diffraction, atomic force microscopy, and X-ray photoelectron spectroscopy measurements, showed a composed structure of Cu3N crystallites with anti-ReO3 structure and a slight oxidation of the resulted film. The crystal structure and growth rate of Cu3N films were affected strongly by substrate temperature. The preferred crystalline orientation of Cu3N films were (111) and (200) at RT, 100℃. These peaks decayed at 200℃ and 300℃ only Cu (111) peak was noticed. Growth of Cu3N films at 100℃ is the optimum substrate temperature for producing high-quality (111) Cu3N films. The deposition rate of Cu3N films estimated to be in range of 18–30 nm/min increased while the resistivity and the microhardness of Cu3N films decreased when the temperature of glass substrate increased.
关键词:
DC magnetron sputtering
,
氮化铜薄膜
,
电阻率
,
显微硬度
Qianghua LU
,
Kailun YAO
,
Dong XI
材料科学技术（英）
The selected area electron diffraction (SAED) pattern of magnetic iron oxide core/gold shell nanoparticles has been studied. For the composite particles with mean size less than 10 nm, their SAED pattern is found to be different from either the pattern of pure Fe oxide nanoparticles or that of pure Au particles. Based on the fact that the ring diameters of these composite particles fit the characteristic relation for the fcc structure, the Au atoms on surfaces of the concerned particles are supposed to pack in a way more tightly than they usually do in pure Au nanoparticles. The driving force for this is the coherency strain which enables the shell material at the heterostructured interface to adapt the lattice parameters of the core.
关键词:
Core-shell structured nanoparticles
,
null
,
null
Applied Physics a-Materials Science & Processing
Amorphous aluminate YAlO3 (YAO) thin films on n-type silicon wafers as gate dielectric layers of metal - oxide semiconductor devices are prepared by pulsed laser deposition. As a comparison, amorphous aluminate LaAlO3 (LAO) thin films are also prepared. The structural and electrical characterization shows that the as-prepared YAO films remain amorphous until 900 degrees C and the dielectric constant is similar to 14. The measured leakage current of less than 10(-3) A/cm(2) at a bias of V-G = 1.0 V for similar to 40-nm-thick YAO and LAO films obeys the Fowler Nordheim tunneling mechanism. It is revealed that the electrical property can be significantly affected by the oxygen pressure during deposition and post rapid thermal annealing, which may change the fixed negative charge density at the gate interface.
关键词:
hafnium oxide;si;stability;silicon;transition;dioxide;devices;hfo2
